Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer
نویسندگان
چکیده
The authors investigated a contrast enhancement behavior of hydrogen silsesquioxane HSQ in a salty development system NaOH /NaCl . Time-resolved analysis of contrast curves and line-grating patterns were carried out to investigate the unique properties of a salty development process. In NaOH developer without salt, the development process was saturated beyond a certain development time. On the other hand, the addition of salt enabled a continuous development, which was not observed in the pure NaOH development. The continuous thinning process enhances the contrast of HSQ in the salty developer, which allows a fast collapsing behavior in HSQ line-grating patterns. During development process, salt seems to have the role of modifying HSQ by breaking network bonds preferentially, leading to a continuous development rate. © 2009 American Vacuum Society. DOI: 10.1116/1.3245991
منابع مشابه
Using high-contrast salty development of hydrogen silsesquioxane for sub-10-nm half-pitch lithography
When used as a negative-tone electron-beam resist, hydrogen silsesquioxane HSQ is typically developed in an aqueous alkali solution such as tetramethyl ammonium hydroxide. This development process results in low contrast. In this work, the authors instead used a mixture of salt and alkali to significantly increase the contrast of HSQ. Contrast values as high as 10 in a 115-nm-thick resist were ...
متن کاملUnderstanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than dev...
متن کاملDense high aspect ratio hydrogen silsesquioxane nanostructures by 100protect unhbox voidb@x penalty @M {}keV electron beam lithography
We investigated the fabrication of dense, high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures by 100 keV electron beam lithography. The samples were developed using a high contrast developer and supercritically dried in carbon dioxide. Dense gratings with line widths down to 25 nm were patterned in 500 nm-thick resist layers and semi-dense gratings with line widths down to 10 nm (40 ...
متن کاملIn situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers
In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates were measured by spinning HSQ directly onto a qua...
متن کاملImprovement in Char Strength with an Open Cage Silsesquioxane Flame Retardant
Different characterization techniques were used to study the hydrolysis and condensation reaction kinetics of 3-methacryloxypropyltrimethoxysilane (MAPTMS) to obtain open cage silsesquioxane oligomers. The formation of hydrogen bonds, which condition the chemical structures of the resulting products, was identified. Improved thermal and fire resistant behavior of unsaturated polyester (UP) comp...
متن کامل